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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-220C package High breakdown voltage: VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3149 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 1.5 5 0.8 40 150 -55~150 ae ae UNIT V V V A A A W Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IB=0 IC=0.75A; IB=0.15A IC=0.75A; IB=0.15A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V f=10MHz ; VCB=10V 10 8 15 30 MIN 800 900 7 TYP. 2SC3149 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V V 2.0 1.5 10 10 40 |I |I V V A A MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time VCC=400V; IC=1A IB1=0.2A;IB2=-0.4A; RL=400| 1.0 3.0 0.7 |I |I |I s s s hFE-1 classifications K 10-20 L 15-30 M 20-40 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3149 Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3149 4 |
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